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    • 歡迎光臨 北京特博萬德科技有限公司 企業官網!
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    北京特博萬德科技

    進口soi硅片

    北京特博萬德獨家代理英國ICEMOSTECH的高品質SOI wafer和 SuperJunction MOSFET。
    SOI wafer尺寸:4”, 5”, 6”,8";
     底層厚度:>200um;頂層厚度:>2um;
     導電類型:N-Type、P-Type、非摻高阻;
    為滿足更多客戶要求,我們也提供超薄頂層和超薄絕緣層;
     頂層厚度:70nm、145nm、220nm、340nm等;
     絕緣層厚度:145nm、500nm等;
    歡迎您來電咨詢更詳細的產品信息!

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    商品描述

    北京特博萬德獨家代理英國ICEMOSTECH的高品質SOI wafer和 SuperJunction MOSFET。
    SOI wafer尺寸:4”, 5”, 6”,8";
     底層厚度:>200um;頂層厚度:>2um;
     導電類型:N-Type、P-Type、非摻高阻;
    為滿足更多客戶要求,我們也提供超薄頂層和超薄絕緣層;
     頂層厚度:70nm、145nm、220nm、340nm等;
     絕緣層厚度:145nm、500nm等;
    歡迎您來電咨詢更詳細的產品信息!


                                                    

     1-    Bonded SOI wafer (絕緣硅上鍵合硅片)

           For 4”(100mm, 5”125mm, 6”150mm
    —— Handle wafer minimum 300um maximum 1000um
    —— Buried Oxide, minimum 0.1 um, maximum 4 um
    —— Device layer minimum 2 um, max 500 um.

     For 8"200mm
    —— Handle thickness minimum 500um and maximum 675um,
    —— Buried Oxide minimum 0.1 um, maximum 4 um
    —— Device layer minimum 5 um, maximum 500 um

    2-    Si-Si direct wafer bonding (replacement for epi) -硅直接鍵合,可替代外延片
          100mm, 125mm, 150mm and 200mm, thickness as specified above.

    3-    Engineered SOI, Double SOI (DSOI), Trench Isolation SOI (dielectric isolation),
          Cavity SOI (for pressure sensor, gyro and accelerometer sensor, microfludic etc.)   and finally Through Silicon Via (TSV)   
    —— Cavity SOI- Bonded SOI or Silicon DWB wafers with cavities performed within the wafer
    —— Multiple SOI 2 or 3 or more layers of SOI designed around your process
    —— Structured wafers silicon wafers or SOI with buried electrode layers, vias, interconnect already incorporated

    4-     SOI + Trench & Refill  Features
    a.  Significant die shrink compared to conventional dielectric isolation(DI) or junction isolation 
    b.  Bulk quality top silicon layer 
    c.  Total device-to-device isolation 
    d.  Lower substrate capacitance than bulk 
    e.  Fully flexible specification on SOI, Trench and refill parameters

    5-   Superjunction MOSFET

    Parameter Parameter

    Specification Range

    Wafer Diameter

    100, 125, 150 mm

    200 mm

    Handle Layer Specifications

    Handle Thickness

    200–1000 μm

    500-750 μm

    Handle Thickness Tolerance

    ±5 μm

    Stack Thickness

    ≥280 – ≤1250 μm

    Dopant Type

    N or P

    Doping

    N type: Phos, Red Phos, Sb & As
    P type: Boron

    Resistivity

    ≤0.001 – ≥10000 ?-cm

    Growth Method

    CZ, MCZ or FZ

    Crystal Orientation

    <100>, <111> or <110>

    Backside Finish

    Lapped/Etched or Polished

    Buried Oxide Specifications

    Thermally Oxidised Buried Oxide Thickness

    0.2 – 5.0 μm grown on Handle, Device or both wafers

     

    Device Layer Specifications

    Device Layer Thickness

    ≥1.5 μm

    5-300 μm

    Tolerance

    ± 0.5 μm

    ±0.8 μm

    Dopant Type

    N or P

    Doping

    N type: Phos, Red Phos, Sb & As
    P type: Boron

    Resistivity

    ≤0.001 – ≥10000 ?-cm

    Growth Method

    CZ, MCZ or FZ

    Crystal Orientation

    <100>, <111> or <110>

    Buried Layer Implant

    N type or P type

    SOI應用優勢

    SOI高速特性

    微處理器,高速通信,三維圖象處理,先進多媒體

    SOI低壓低功耗特點

    移動計算機,移動電話,便攜式電子設備,射頻集成靈巧功率器件以及其它要求功耗低、散熱快的領域,如單芯片系統SOC,微小衛星等

    SOI應用于惡劣環境

    高溫器件,高壓器件,衛星或其它空間應用,武器控制系統等

    SOI光通信和MEMS應用

    作為一種結構材料,可制作硅基集成光電器件,應用于高速寬帶互聯網和其它光網絡的接口。此外,SOI圓片還廣泛應用于制作微機電系統(MEMS)器件,如傳感器


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